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Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunctionWELCH, D. F; WICKS, G. W; EASTMAN, L. F et al.Journal of applied physics. 1984, Vol 55, Num 8, pp 3176-3179, issn 0021-8979Article

Effective mass filtering: giant quantum amplification of the photocurrent in a semiconductor superlatticeCAPASSO, F; KHALID MOHAMMED; CHO, A. Y et al.Applied physics letters. 1985, Vol 47, Num 4, pp 420-422, issn 0003-6951Article

Photoluminescence determination of well depth of Ga0.47In0.53As/Al0.48In0.52As in an ultrathin single quantum wellSHUM, K; HO, P. P; ALFANO, R. R et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 6, pp 3806-3810, issn 0163-1829Article

Required grading length to eliminate the heterojunction spike in npn In0.52Al0.48As/In0.53Ga0.47As/InP bipolar transistorsCHAND, N; MORKOC, H.Electronics Letters. 1985, Vol 21, Num 19, pp 841-843, issn 0013-5194Article

In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As abrupt double-heterojunction bipolar transistorsWAI LEE; FONSTAD, C. G.IEEE electron device letters. 1986, Vol 7, Num 12, pp 683-685, issn 0741-3106Article

THE USE OF METALORGANICS IN THE PREPARATION OF SEMICONDUCTOR MATERIALS. V. THE FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYSMANASEVIT HM; SIMPSON WI.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 135-137; BIBL. 14 REF.Serial Issue

Resonant-cavity InGaAIAs/InGaAs/InAIAs phototransistors with high gain for 1.3-1.6 μmANANTH DODABALAPUR; CHANG, T. Y.Applied physics letters. 1992, Vol 60, Num 8, pp 929-931, issn 0003-6951Article

InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxyKAWAMURA, Y; ASAHI, H; WAKITA, K et al.Electronics Letters. 1984, Vol 20, Num 11, pp 459-460, issn 0013-5194Article

ORIENTED GROWTH OF WHISKERS OF AIIIBV COMPOUNDS BY VLS-MECHANISM.GIVARGIZOV EI.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 5; PP. 473-484; ABS. RUSSE; BIBL. 19 REF.Article

GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

Double junction AllnAs/GaInAs multiquantum well avalanche photodiodesLE BELLEGO, Y; PRASEUTH, J. P; SCAVENNEC, A et al.Electronics Letters. 1991, Vol 27, Num 24, pp 2228-2230, issn 0013-5194Article

Magnetophonon resonance and remote phonon scattering in a GaInAs-AlInAs multiquantum wellNICHOLAS, R. J; BEN AMOR, S; PORTAL, J. C et al.Semiconductor science and technology. 1989, Vol 4, Num 2, pp 116-118, issn 0268-1242Article

Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurementsYU, Y.-J; BOSMAN, G; BHATTACHARYA, P. K et al.Applied physics letters. 1987, Vol 51, Num 18, pp 1433-1435, issn 0003-6951Article

Determination of the microscopic quality of InGaAs-InAlAs interfaces by photoluminescence. Role of interrupted molecular beam epitaxial growthJUANG, F.-Y; BHATTACHARYA, P. K; SINGH, J et al.Applied physics letters. 1986, Vol 48, Num 4, pp 290-292, issn 0003-6951Article

InGaAs/InAlGaAs hot-electron transitors with current gain of 15IMAMURA, K; MUTO, S; FUJII, T et al.Electronics Letters. 1986, Vol 22, Num 21, pp 1148-1150, issn 0013-5194Article

Optical characterization of InGaAs-InAlAs strained-layer superlattices grown by molecular beam epitaxyNISHI, K; HIROSE, K; MIZUTANI, T et al.Applied physics letters. 1986, Vol 49, Num 13, pp 794-796, issn 0003-6951Article

A In0.53Ga0.47As-In0.48As single quantum well field-effect transistorSEO, K. S; BHATTACHARYA, P. K; NASHIMOTO, Y et al.IEEE electron device letters. 1985, Vol 6, Num 12, pp 642-644, issn 0741-3106Article

Frequency-shifted polaron coupling in Ga0.47In0.53As heterojunctionsNICHOLAS, R. J; BRUNEL, L. C; HUANT, S et al.Physical review letters. 1985, Vol 55, Num 8, pp 883-886, issn 0031-9007Article

High-temperature heavy-hole and light-hole excitons and well-width dependence of excitons in InGaAs/InAlAs multiple-quantum-well structuresKAWAMURA, Y; WAKITA, K; ASAHI, H et al.Electronics Letters. 1985, Vol 21, Num 24, pp 1168-1169, issn 0013-5194Article

Density of the 2D electron gas in modulation doped GaInAs/AlInAs layers from a charge control analysisRAY CHAUDHURI, D; ROY, J. B; BASU, P. K et al.Physica status solidi. A. Applied research. 1984, Vol 86, Num 1, pp K79-K82, issn 0031-8965Article

1.5-1.6-μ Ga0.47In0.53As/Al0.48In0.52 as multiquantum well lasers grown by molecular beam epitaxyTEMKIN, H; ALAVI, K; WAGNER, W. R et al.Applied physics letters. 1983, Vol 42, Num 10, pp 845-847, issn 0003-6951Article

Zero-net-strain multiquantum well lasersSELTZER, C. P; PERRIN, S. D; TATHAM, M. C et al.Electronics Letters. 1991, Vol 27, Num 14, pp 1268-1270, issn 0013-5194Article

High-speed InAlAs/InGaAs heterojunction bipolar transistorsFUKANO, H; KAWAMURA, Y; TAKANASHI, Y et al.IEEE electron device letters. 1988, Vol 9, Num 6, pp 312-314, issn 0741-3106Article

Ga0.4In0.6As/Al0.55In0.45As pseudomorphic modulation-doped field-effect transistorsKUO, J. M; TAO-YUANG CHANG; LALEVIC, B et al.IEEE electron device letters. 1987, Vol 8, Num 9, pp 380-382, issn 0741-3106Article

Electroabsorption on room-temperature excitons in InGaAs/InGaAlAs multiple quantum-well structuresWAKITA, K; KAWAMURA, Y; YOSHIKUNI, Y et al.Electronics Letters. 1985, Vol 21, Num 8, pp 338-340, issn 0013-5194Article

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